Features: · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment.· Low collector-to-emitter saturation voltage.·...
2SD2200: Features: · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applicatio...
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· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment.
· Low collector-to-emitter saturation voltage.
· Large current capacity.

|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
()90 |
V | |
|
Collector-to-Emitter Voltage |
VCEO |
()80 |
V | |
|
Emitter-to-Base Voltage |
IEBO |
()6 |
V | |
|
Drain Current |
IC |
()5 |
A | |
|
Collector Current (Pulse) |
ICP |
()9 |
A | |
|
Allowable Power Dissipation |
PD |
1.65 |
W | |
|
Tc=25°C |
30 |
W | ||
|
Channel Temperature |
Tj |
150 |
°C | |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 80 |
| IC [A] | 5 |
| PC Tc=25°C [W] | 30 |
| Electrical characteristics | |
|---|---|
| hFE min | 70 |
| hFE max | 280 |
| VCE [V] | 2 |
| IC [A] | 1 |
| VCE (sat) max [V] | 0.4 |
| IC [A] | 3 |
| IB [A] | 0.3 |
| fT typ [MHz] | 20 |