2SD2576

The 2SD2576 is designed as one kind of power transistor (60 V, 3 A) that has three points of features:(1)low saturation voltage, typically VCE(sat)=0.3V at Ic/IB=2A / 0.2A;(2)excellent DC current gain characteristics;(3)wide SOA (safe operating area).

The absolute maximum ratings of the 2SD2576 can be summarized as:(1)collector-base voltage: 80 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 7 V;(4)collector current: 3 A or 6 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD2576 can be summarized as:(1)collector-base breakdown voltage: 80 V;(2)collector-emitter breakdown voltage: 60 V;(3)emitter cutoff current: 10 uA;(4)collector-emitter saturation voltage: 1 V;(5)DC current transfer ratio: 100 to 320;(6)transition frequency: 8 MHz;(7)output capacitance: 35 pF. If you want to know more information such as the electrical characteristics about the 2SD2576, please download the datasheet in www.seekic.com or www.chinaicmart.com.