2SD822

The 2SD822 is designed as one kind of isc silicon NPN power transistor with some points of features:(1)high breakdown voltage:VCBO=1500V (min);(2)high switching speed;(3)low collector saturation voltage:VCE(sat)=5.0V(max.)@ IC=6A.Also it can be used in color TV horizontal output applications.

The absolute maximum ratings of the 2SD822 can be summarized as:(1)collector-base voltage:1500 V;(2)collector-emitter voltage:600 V;(3)emitter-base voltage:5 V;(4)collector current-continuous:7 A;(5)emitter current-continuous:-7 A;(6)collector power dissipation @ TC90:50 W;(7)junction temperat-ure:150 ;(8)storage temperature range:-55 to 150 .

And the electrical characteristics of the 2SD822 can be summarized as:(1)collector-emitter saturation voltage:5.0 V;(2)base-emitter saturation voltage:1.5 V;(3)collector cutoff current:10 A;(4)emitter cutoff current:1.0 mA;(5)DC current gain:8;(6)output capacitance:165 pF;(7)current-gain-bandwidth product:3 MHz;(8)fall time:1.0 s.If you want to know more information such as the electrical characteristics about the 2SD822,please download the datasheet in www.seekic.com or www.chinaicmart.com.