2SD882

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 100 MHz
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : SOT-32


Features:

HIGH CURRENT
LOW SATURATION VOLTAGE
COMPLEMENT TO 2SB772




Application

VOLTAGE REGULATION
RELAY DRIVER
GENERIC SWITCH
AUDIO POWER AMPLIFIER
DC-DC CONVERTER




Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (IE = 0)	60	V
VCEO	Collector-Emitter Voltage (IB = 0)	30	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IV	Collector Current	3	A
ICM	Collector Peak Current (tp < 5 ms)	6	A
IB	Base Current	1	A
IBM	Base Peak Current (tp < 5 ms)	2	A
Ptot	Total Dissipation at Tc = 25	12.5	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The 2SD882 is designed as one kind of NPN medium power transistor that manufactured by using planar Technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. This device can be used in (1)voltage regulation; (2)relay driver; (3)generic switch; (4)audio power amplifi-er; (5)DC-DC converter. And the features of it are:(1)high current; (2)low saturation voltage; (3)complement to 2SB772.

The absolute maximum ratings of the 2SD882 can be summarized as:(1)collector-base voltage (IE=0):60 V;(2)collector-emitter voltage (IB=0):30 V;(3)collector-base voltage (Ic=0):5 V;(4)collector current:3 A;(5)collector peak current (tP < 5ms):6 A;(6)base current:1 A;(7)base peak current (tP < 5ms):2 A;(8)total dissipation at Tc=25°C:12.5 W;(9)storage temperature:-65 to 150 °C;(10)max. operating junction temperature:150 °C;(11)thermal resistance junction-case:10 °C/W.

Information furnished is believed to be accurate and reliable. However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.If you want to know more information such as the electrical characteristics about the 2SD882, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	2SD882
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	700mV @ 100mA, 2A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SD882 2SD882 497 4821 5 ND 49748215ND 497-4821-5