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2SJ304(F)

MOSFET MOSFET P-Ch 60V 14A Rdson 0.12 Ohm

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SeekIC No. : 00164228 Detail

2SJ304(F): MOSFET MOSFET P-Ch 60V 14A Rdson 0.12 Ohm

2SJ304(F) Data Sheet

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Part Number:
2SJ304(F)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-220 NIS
Packaging : Bulk    

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Bulk
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms
Package / Case : TO-220 NIS


Parameters:

Technical/Catalog Information2SJ304(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs120 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 10V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / Case2-10R1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ304 F
2SJ304F



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