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SeekIC No. : 00164228 Detail

2SJ304(F): MOSFET MOSFET P-Ch 60V 14A Rdson 0.12 Ohm

2SJ304(F) Data Sheet

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Part Number:: 2SJ304(F)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/4/26

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	14 A
Resistance Drain-Source RDS (on) :	0.12 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-220 NIS
Packaging :	Bulk

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Bulk
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms
Package / Case : TO-220 NIS

Parameters:

Technical/Catalog Information	2SJ304(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	120 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 10V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	2-10R1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ304 F 2SJ304F

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2SJ304(F)

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