2SJ401(Q)

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 20A
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 100W
Input Capacitance (Ciss) @ Vds: 2800pF @ 10V
Package / Case: TO-220-3, Short Tab
Manufacturer: Toshiba
Supplier Device Package: TO-220FL
Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V


Parameters:

Technical/Catalog Information	2SJ401(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	45 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 10V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	2-10S1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ401 Q 2SJ401Q