Purchase 2SJ505(S), In-stock 2SJ505(S) From SeekIC.
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2SJ505(S)
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DataSheet
General Description
2SJ505(S) Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 50 | A |
| Drain peak current | ID(pulse)*1 | 200 | A |
| Body to drain diode reverse drain current | IDR | 50 | A |
| Avalanche current | IAP*3 | 50 | A |
| Avalanche energy | EAR*3 | 214 | mJ |
| Channel dissipation | Pch*2 | 75 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | T stg | -55 ~ +150 | °C |
2SJ505(S) Features
Low on-resistance
RDS(on) = 0.017 typ.
Low drive current.
4V gate drive devices.
High speed switching.
RDS(on) = 0.017 typ.
Low drive current.
4V gate drive devices.
High speed switching.
2SJ505(S) Connection Diagram
2SJ0163
PDF/DataSheet Download
- Datasheet: 2SJ0163
- File Size: 48479 KB
- Manufacturer: PANASONIC [Panasonic Semiconductor]
- Click here to Download
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- ·2SJ105
- TOSHIBA [Toshiba Semiconductor]
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2SJ505(S) Relative Products
2SJ505(L)
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The 2SJ503 is a p-channel silicon mosfet. Features of the 2SJ503 are:(1)Low ON resistance;(2)Ultrahigh-speed switching;(3)4V drive. The absolute maximum ratings of the 2SJ503 can be summarized as:(1)drain to source voltage,VDSS:-30V;(2)gate to source volta...
2SJ502
The The 2SJ502 is a p-channel silicon mosfet.It is ultrahigh speed switching applications. Features of the 2SJ502 are:(1)Low ON resistance;(2)Ultrahigh-speed switching;(3)4V drive. The absolute maximum ratings of the 2SJ502 can be summarized as:(1)drain to...
2SJ501
The The 2SJ501 is a p-channel silicon mosfet.It is ultrahigh speed switching applications. Features of the 2SJ501 are:(1)Low ON resistance;(2)Ultrahigh-speed switching;(3)2.5V drive. The absolute maximum ratings of the 2SJ501 can be summarized as:(1)drain ...
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