Features: ` Low on-resistanceRDS(on) = 0.065 typ. (at VGS = 10V, ID = 5A)` Low drive current` High speed switching` 4V gate drive devicesSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain cur...
2SJ506: Features: ` Low on-resistanceRDS(on) = 0.065 typ. (at VGS = 10V, ID = 5A)` Low drive current` High speed switching` 4V gate drive devicesSpecifications Item Symbol Rating Unit Dr...
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|
Item |
Symbol |
Rating |
Unit |
| Drain to source voltage |
VDSS |
-30 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
-10 |
A |
| Drain peak current |
ID(pulse)1 |
-40 |
A |
| Body to drain diode reverse drain current |
IDR |
-10 |
A |
| Channel dissipation |
Pch2 |
20 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |