Features: • Low on-resistance RDS (on) = 0.12 typ.• 4 V gate drive devices• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS -60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -10 A Drain Current ...
2SJ529: Features: • Low on-resistance RDS (on) = 0.12 typ.• 4 V gate drive devices• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage V...
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Parameter | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | -60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -10 | A |
Drain Current (Pulse) | ID(pulse) Note 1 |
-40 | A |
Body-drain diode reverse drain current | IDR | -10 | A |
Avalanche current | IAPNote3 | -10 | A |
Avalanche energy | EarNote3 | 8.5 | mJ |
Channel dissipation | PchNote 2 | 20 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |