Features: ` Low on-resistance RDS(on) = 0.08 typ.` 4V gate drive devices.` High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 45 A Drain peak current ID(pulse)Note1 180 A ...
2SJ530: Features: ` Low on-resistance RDS(on) = 0.08 typ.` 4V gate drive devices.` High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to sou...
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| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 45 | A |
| Drain peak current | ID(pulse)Note1 | 180 | A |
| Body-drain diode reverse drain current | IDR | 45 | A |
| Avalanche current | IAP Note3 | 45 | A |
| Avalanche energy | EAR Note3 | 173 | mJ |
| Channel dissipation | Pch Note2 | 60 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |