Features: ` Low on-resistanceRDS(on) = 0.16 typ.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -10 A Drain Current ID(pulse)Note1 -40 ...
2SJ547: Features: ` Low on-resistanceRDS(on) = 0.16 typ.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to...
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| Parameter | Symbol | Ratings | Unit |
| Drain to Source Voltage | VDSS | 60 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current | ID | -10 | A |
| Drain Current | ID(pulse)Note1 | -40 | A |
| Body-drain diode reverse drain current | IDR | -10 | A |
| Avalenche current | IAP Note3 | -10 | A |
| Avalenche energy | EARNote3 | 8.5 | mJ |
| Channel dissipation | PchNote2 | 20 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50