2SJ556

Features: ` Low on-resistance RDS(on) = 0.028 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 45 A Drain peak current ID...

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SeekIC No. : 004225289 Detail

2SJ556: Features: ` Low on-resistance RDS(on) = 0.028 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS ...

floor Price/Ceiling Price

Part Number:
2SJ556
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/7

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Product Details

Description



Features:

` Low on-resistance RDS(on) = 0.028 typ.
` Low drive current.
` 4V gate drive devices.
` High speed switching.



Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 45 A
Drain peak current ID(pulse)Note1 180 A
Body-drain diode reverse drain current IDR 45 A
Avalanche current IAP Note3 45 A
Avalanche energy EAR Note3 173 mJ
Channel dissipation Pch Note2 60 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Note: 1. PW 10ms, duty cycle1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50



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