2SJ576

Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (CMPAK)Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V D...

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SeekIC No. : 004225301 Detail

2SJ576: Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (CMPAK)Specifications Parameter Symbol...

floor Price/Ceiling Price

Part Number:
2SJ576
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

·  Low on-resistance
RDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)
·  4 V gate drive device.
·  Small package (CMPAK)



Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -400 A
Drain Current ID(pulse)Note1 -100 A
Body-drain diode reverse drain current IDR -400 A
Channel dissipation PchNote2 300 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10s, duty cycle 1 %
2. Value on the alumina ceramic board (12.5x20x0.7 mm)




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