Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain cu...
2SJ588: Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit D...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
-30 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
-100 |
mA |
| Drain peak current |
ID(pulse)Note1 |
-400 |
mA |
| Body-drain diode reverse drain current |
IDR |
-100 |
mA |
| Channel dissipation |
Pch |
300 |
mW |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |