2SJ588

Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain cu...

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SeekIC No. : 004225311 Detail

2SJ588: Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit D...

floor Price/Ceiling Price

Part Number:
2SJ588
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

`  Low on-resistance
     RDS =2.8 typ. (VGS = -10 V , ID = -50 mA)
     RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)
`  4 V gate drive device.



Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
-100
mA
Drain peak current
ID(pulse)Note1
-400
mA
Body-drain diode reverse drain current
IDR
-100
mA
Channel dissipation
Pch
300
mW
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Note: 1. PW 10 s, duty cycle 1%


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