2SK0615

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 500mA
Power - Max: 1W
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 80V
Mounting Type: Through Hole
Packaging: Bulk
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Input Capacitance (Ciss) @ Vds: 45pF @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: 3-SIP
Supplier Device Package: M-A1


Features:

Low ON-resistance
High-speed switching
Allowing to be driven directly by CMOS and TTLM
type package, allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.

Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source voltage	VDS	80	V
Gource voltage	VGSO	20	V
Drain current	ID	±0.5	A
Max drain current	IDP	±1	A
Allowable power dissipation	PD*	1	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	-55 to +150	°C

*1
Pulse measurement
*2
ton, toff measurement circuit