Features: Low ON-resistanceLow-noise characteristicsApplicationComplementary to 2SJ163Specifications Parameter Symbol Ratings Unit Gate to drain voltage VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation ...
2SK1103: Features: Low ON-resistanceLow-noise characteristicsApplicationComplementary to 2SJ163Specifications Parameter Symbol Ratings Unit Gate to drain voltage VGDS −65 V ...
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| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDS |
−65 |
V |
| Drain current |
ID |
20 |
mA |
| Gate current |
IG |
10 |
mA |
| Allowable power dissipation |
PD |
150 |
mW |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
−55 to +150 |
|