Features: • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - SSpecifications Drain to Source Voltage VDSX 20 V Gate to Drai...
2SK1109: Features: • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and hi...
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| Drain to Source Voltage |
VDSX |
20 |
V |
| Gate to Drain Voltage |
VGDO |
20 |
V |
| Drain Current |
ID |
10 |
mA |
| Gate Current |
IG |
10 |
mA |
| Total Power Dissipation |
PT |
80 |
mW |
| Junction Temperature |
V GS |
±20 |
V |
| Max. Power Dissipation |
Tj |
125 |
°C |
|
Storage Temperature |
Tstg |
55 to +125 |
°C |