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MFG:TOS Package Cooled:TO-220 D/C:08+

MFG:TOS Package Cooled:TO-220 D/C:08+

| Characteristic | Symbol | Rating | Unit | |
| Drain?source voltage | VDSS | 1000 | V | |
| Drain?gate voltage (RGS = 20 k) | VDGR | 1000 | V | |
| Gate?source voltage | VGSS | ±20 | V | |
| Drain current | DC (Note 1) | ID | 4 | A |
| Pulse (Note 1) | IDP | 12 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 100 | W | |
| Channel temperature | Tch | 150 | ||
| Storage temperature range | Tstg | -55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SK1119
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