2SK1365

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power - Max: 90W
Package / Case: TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)IS


Features:






Specifications






Description

      The 2SK1365 is designed as silicon N channel MOS type whose typical application is switching power supply applications.
      2SK1365 has four features.The first one is that it wold have low drain−source ON resistance which means RDS (ON) = 1.5 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 4.0 S (typ.).The third one is that it would have low leakage current which means IDSS = 300 A (max) (VDS = 800 V).The last one is about its enhancement mode which means Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings and electrical characteristics(Ta=25) of 2SK1365 have ben concluded into several points as follow.The first one is about its drain−source voltage which would be 1000 V.The second one is about its drain−gate voltage(RGS = 20 k) which would be 1000 V.The third one is about its gate−source voltage which would be ±20 V.The fourth one is about its drain current which would be 7A for DC and 21A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 90 W.The sixth one is about its channel temperature which would be 150 °C.The seventh one is about its storage temperature range which would be from −55 to 150 °C.The eighth one is about its gate leakage current which would be ±50(max) nA with condition of Vgs=±20 V,Vds =0 V.The ninth one is about its drain cut−off current which would be 300(max) A with condition of Vds=800 V,Vgs=0 V.The eleventh one is about its drain−source breakdown voltage 1000(min) V with condition of Id= 10mA,Vgs=0.And so on.For more information please contact us.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Parameters:

Technical/Catalog Information	2SK1365
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.8 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	2-16F1B
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK1365 2SK1365