2SK1399

 Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
   impedance
 Possible to reduce the number of parts by omitting the bias resistor
Can be used complementary with the 2SJ185

Drain to Source Voltage                              V_DSS                           50                                  V
Gate to Source Voltage                               V_GSS                         ±7.0                                V
Drain Current (DC)                                      I_D(DC)                       ±100                              mA
 
Drain Current (pulse) ^Note                           I_D(pulse)                   ±200                               mA
Total Power Dissipation                              P_T 200 mW
Channel Temperature                                T_ch                               150                                °C
Operating Temperature                             T_opt                       55 to +80                          °C
Storage Temperature                                T_stg                       55 to +150                        °C
Note PW 10 ms, Duty Cycle 50 %

The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.