2SK1412

The 2SK1412 is designed as one kind of N-channel MOS silicon FET that has three points of features:(1)low ON resistance, low input capacitance, very high-speed switching;(2)high reliability (adoption of HVP process);(3)micaless package facilitating mounting.

The absolute maximum ratings of the 2SK1412 can be summarized as:(1)drain to source voltage:1500 V;(2)gate to source voltage: +/- 20 V;(3)drain current (DC): 0.1 A;(4)drain current (pulse): 0.2 A;(5)allowable power dissipation: 2.0 W;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SK1412 can be summarized as:(1)input capacitance: 40 pF;(2)output capacitance: 12 pF;(3)reverse transfer capacitance: 3.0 pF;(4)turn-ON delay time: 15 ns;(5)rise time: 25 ns. If you want to know more information such as the electrical characteristics about the 2SK1412, please download the datasheet in www.seekic.com or www.chinaicmart.com .