2SK1419

DescriptionThe 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications. The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed switching; (3) converters; (4) micaless package facilitating easy mounting. What comes next is abs...

product image

2SK1419 Picture
SeekIC No. : 004225534 Detail

2SK1419: DescriptionThe 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications. The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed...

floor Price/Ceiling Price

Part Number:
2SK1419
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications.

The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed switching; (3) converters; (4) micaless package facilitating easy mounting.


What comes next is absolute maximum ratings of 2SK1419 at TA is 25. (1): drain to source voltage(VDSS) is 60 V; (2): gate to source voltage(VGSS) is ±20 V; (3): drain current(DC) is 15 A; (4): drain current(pulse) is 60 A; (5): allowable power dissipation(PD) is 25 W; (6): storage temperature(TSTG) is from -55 to 150;(7): channel temperature is 150 ; (8): gate to source leakage current is ±100 nA at VGS is ±20 V and VDS is 0 V; (9): input capacitance is 750 pF when VDS is 20 V and f is 1 MHz; (10): rise time is 43 ns and fall time is 90 ns; (11); diode forward voltage is 1.8 V at the condition of IS is 15 A and VGS is 0 V; (12): reverse transfer capacitance is 90 pF at VDS is 20 V and f is 1 MHz.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Connectors, Interconnects
Power Supplies - Board Mount
RF and RFID
Industrial Controls, Meters
Potentiometers, Variable Resistors
View more