2SK1495

The 2SK1495 is designed as one kind of N-channel MOS field effect transistor that can be used in high voltage switching applications. Features of this device are:(1)low on-resistance:RDS (on)=0.9 (VGS=10 V, ID=4.0 A);(2)low ciss ciss = 1060 pF typ.;(3)high avalanche capability ratings;(4)built-in G-S gate protection diodes.

The absolute maximum ratings of the 2SK1495 can be summarized as:(1)drain to source voltage: 450 or 500 V;(2)gate to source voltage:±30 V;(3)drain current (DC):±7.0 A;(4)drain current (pulse):±28 A;(5)total power dissipation (Tc=25 °C): 70 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)single avalanche current:10.5 A;(9)singleavalanche energy: 206 mJ.

And the electrical characteristics (TA=25 °C) of the 2SK1495 can be summarized as:(1)drain to source on-resistance: 0.7 or 0.8 ;(2)gate to source cutoff voltage: 2.5 V to 3.5 V(3)forward transfer admittance: 3.0 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-10 A;(6)input capacit-ance:1060 pF;(7)output capacitance:340 pF;(8)reverse transfer capacitance: 150 pF;(9)turn-on delay time: 70 ns;(10)rise time: 30 ns. If you want to know more information such as the electrical characteristics about the 2SK1495, please download the datasheet in www.seekic.com or www.chinaicmart.com.