2SK1596

The 2SK1596 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 3400 pF typ.;(4)low on-state resistance RDS(on)= 20 m max. (VGS=10 V, ID=20 A).

The absolute maximum ratings of the 2SK1596 can be summarized as:(1)drain to source voltage: 30 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±40.0 A;(4)drain current (pulse):±160 A;(5)total power dissipation (Tc=25 °C): 35 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1596 can be summarized as:(1)drain to source on-state resistance: 14 ;(2)gate to source cut-off voltage: 1.0 to 2.5 V;(3)forward transfer admittance: 35 S;(4)drain leakage current: 10 A;(5)gate to source leakage current: +/-10.0 A;(6)input capacita-nce: 3400 pF;(7)output capacitance: 1800 pF;(8)reverse transfer capacitance: 960 pF;(9)turn-on delay time: 80 ns;(10)rise time: 1000 ns;(11)turn-off delay time: 210 ns;(12)fall time: 230 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.