2SK161

The 2SK161 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for FM tuner applications and VHF band amplifier applications. There are some features as follows: (1)low noise figure: NF=2.5 dB (typ) (f=100 MHz); (2)high forward transfer admittance: |Yfs|=9 mS (typ); (3)extremely low reverse transfer capacitance: Crss=0.1 pF (typ).

What comes next is the maximum ratings of 2SK161 (Ta=25): (1)gate-drain voltage, VGDO: -18 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 200 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK161 (Ta=25): (1)gate leakage current, IGSS: -10 nA max at VGS=-0.5 V, VDS=0 V; (2)gate-drain breakdown voltage, V(BR)GDO: -18 V min at IG=-100A;; (3)drain current, IDSS: 1.0 mA min and 10 mA max at VGS=0, VDS=10 V; (4)gate-source cut-off voltage, VGS(OFF): -0.4 V min and -4.0 V max at VDS=10 V, ID=1A; (5)forward transfer admittance, |Yfs|: 9 mS typ at VDS=10 V, VGS=0, f=1 kHz; (6)input capacitance, Ciss: 6.0 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (7)reverse transfer capacitance, Crss: 0.10 pF typ and 0.15 pF max at VGD=-10 V, f=1 MHz; (8)power gain, GPS: 18 dB typ at VDD=10 V, f=100 MHz; (9)noise figure, NF: 2.5 dB typ and 3.5 dB max at VDD=10 V, f=100 MHz.