2SK184

The 2SK184 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for low noise audio amplifier applications. There are some features as follows: (1)high |Yfs|: |Yfs|=15 mS (typ) (VDS=10 V, VGS=0); (2)high breakdown voltage: VGDS=-50 V; (3)low noise: NF=1.0 dB (typ) (VDS=10 V, ID=0.5 mA, f=1 kHz, RG=1 k); (4)high input impedance: IGSS=-1 nA (max) (VGS=-30 V); (5)small package.

What comes next is about the maximum ratings (Ta=25): (1)gate-drain voltage, VGDS: -50 V; (2)gate current, IG: 10 mA; (3)drain power dissipation (Tc=25), PD: 200 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is about the electrical characteristics (Ta=25): (1)gate leakage current, IGSS: -1.0 nA at VGS=-30 V, VDS=0 V; (2)drain cut-off current, IDSS: 1.2 mA min and 14.0 mA max at VDS=10 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: -50 V min at IG=-100A, VDS=0 V; (4)gate-source cut-off voltage, VGS(OFF): -0.2 V min and -1.5 V max at VDS=10 V, ID=0.1 A; (5)forward transfer admittance, |Yfs|: 4.0 mS min and 15 mS typ at VDS=10 V, VGS=0, f=1 kHz; (6)input capacitance, Ciss: 13 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (7)reverse transfer capacitance, Crss: 3 pF typ at VDG=10 V, ID=0, f=1 MHz; (8)noise figure, NF: 5 dB typ and 10 dB max at VDS=10 V, RG=1 k, ID=0.5 mA, f=10 Hz; 1 dB typ and 2 dB max at VDS=10 V, RG=1 k, ID=0.5 mA, f=1 kHz.