Features: `Low on-resistance`RDS(on)=0.65 (VGS=10V,ID=2A)`Low Ciss Ciss=300pF typ`Built-in G-S Gate Protection Diode`High Avalanche Capability RatingsSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 180 V Gate to source voltage VGSS ±20 V Drain Curren...
2SK1954: Features: `Low on-resistance`RDS(on)=0.65 (VGS=10V,ID=2A)`Low Ciss Ciss=300pF typ`Built-in G-S Gate Protection Diode`High Avalanche Capability RatingsSpecifications Parameter Symbol Rating U...
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| Parameter | Symbol | Rating | Unit |
| Drain to source voltage | VDSS | 180 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain Current | ID | ±4.0 | A |
| Power Dissipation | PD |
20 |
W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | -55 to +150 |