Purchase 2SK2013, In-stock 2SK2013 From SeekIC.
Package Cooled:03+ D/C:220
- Table of contents:
2SK2013
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Suppliers
DataSheet
General Description
2SK2013 Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Drain−source voltage | VDSS | 180 | V |
| Gate−source voltage | VGSS | ±20 | V |
| Drain current (Note 1) | ID | 1 | A |
| Drain power dissipation (Tc = 25) | PD | 25 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature range | Tstg | −55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SK2013 Features
· High breakdown voltage : VDSS = 180V
· High forward transfer admittance : |Yfs| = 0.7 S (typ.)
· Complementary to 2SJ313
· High forward transfer admittance : |Yfs| = 0.7 S (typ.)
· Complementary to 2SJ313
2SK2013
PDF/DataSheet Download
- Datasheet: 2SK2013
- File Size: 164068 KB
- Manufacturer: Toshiba
- Click here to Download
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