Features: • Low onresistance• High speed switching• Low drive current• 4 V gate drive device can be driven from 5 V source• Suitable for switching regulator, DC-DC converter• Avalanche ratingsApplication·High speed power switchingSpecifications Item Symbol...
2SK2096: Features: • Low onresistance• High speed switching• Low drive current• 4 V gate drive device can be driven from 5 V source• Suitable for switching regulator, DC-DC conv...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 45 | A |
| Drain peak current | ID(pulse)* | 180 | A |
| Bodydrain diode reverse drain current | IDR | 45 | A |
| Avalanche current | IAP*** | 45 | A |
| Avalanche energy | EAR*** | 173 | mJ |
| Channel dissipation | Pch** | 100 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |