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2SK2112

Features: • Low ON resistance R DS(on) = 1.2 MAX. @VGS = 4.0 V, ID = 0.5 A• High switching speed ton + toff < 100 ns• Low parasitic capacitanceSpecifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 100 V ...

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SeekIC No. : 004225919 Detail

2SK2112: Features: • Low ON resistance R DS(on) = 1.2 MAX. @VGS = 4.0 V, ID = 0.5 A• High switching speed ton + toff < 100 ns• Low parasitic capacitanceSpecifications PARAMETER ...

2SK2112 Data Sheet

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Part Number:
2SK2112
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• Low ON resistance
   R DS(on) = 1.2 MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed
   ton + toff < 100 ns
• Low parasitic capacitance


Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
 VGS = 0
100
V
Gate to Source Voltage
VGSS
 VDS = 0
±20
V
Drain Current (DC)
I D(DC)
±1.0
A
Drain Current (Pulse)
I D(pulse)
 PW 10 ms
Duty cycle 50 %
±.20
A
Total Power Dissipation
PT
 16 cm2 * 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C



Description

The 2SK2112 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

2SK2112 has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as  motors and DC/DC converters.




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