2SK2132

The 2SK2132 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for applicances including filter circuit. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss=300 pF typ.;(4)low on-state resistance RDS(on)= 0.65 max. (VGS=10 V, ID=2.0 A).

The absolute maximum ratings of the 2SK2132 can be summarized as:(1)drain to source voltage: 180 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±4.0 A;(4)drain current (pulse):±16 A;(5)total power dissipation (Tc=25 °C): 1.8 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK2132 can be summarized as:(1)drain to source on-resistance: 0.52 ;(2)gate to source cut-off voltage: 2.0 to 4.0 V;(3)forward transfer admittance: 0.5 S;(4)drain cut-off current: 100 A;(5)gate to source leakage current: +/-10.0 A;(6)input capacita-nce: 300 pF;(7)output capacitance: 170 pF;(8)feedback capacitance: 1.5 pF;(9)turn-on delay time: 50 ns;(10)rise time: 10 ns;(11)turn-off delay time: 28 ns;(12)fall time: 12 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.