2SK2150

      2SK2150  is a kind of toshiba field effect transistor with four unique features. The first one is low drain-source on resistance which is 0.29 typ. The second one is high forward transfer admittance which is 14 s typ. The third one is low leakage current which is 100 A max.when the VDS is 500 V. The forth one is enchancement-mode(Vth is 2.0 v to 4.0 V when VDS is 10 V and ID is 1 mA).
      There are some amximum ratings of 2SK2150 under the condition that Ta is 25. Drain-source voltage(VDSS) is 500 V. Drain-gate voltage(VDGR) (RGS is 20 K) is 500 V. Gate-source voltage (VGSS) is ±30 V. Drain current of DC (ID) is 15 A. Drain Pulse current (IDP) is 60 A. Drain power dissipation(Tc is 25) (PD) is 150 W. Channel temperature(Tch) is 150. Storage temperature range(Tstg) is from -55 to 150. Thermal resistance(channel to case) is 0.833 /W.Thermal resistance(channel to ambient) is 50 /W. ELectrical characteristics: Gate leakage current (IGSS) is ±10 A max when VGS is ±25 v and VDS is 0 V . Gate-source breakdown voltage(V(BR)GSS) is ±30 V min when IG is ±100A and VDS is 0 V . Drain cut-off current (IDSS) is 100A max when VDS is 500 V and VGS is 0 V. Drain-source breakdown voltage(V(BR)DSS) is 500 V min when ID is 10 mA and VGS is 0 V . Gate threshold voltage(Vth) is 2.0 V min and 4.0 V max when VDS is 10 V and ID is 1 mA. Drain-source on resistance(RDS(ON)) is 0.29 typ and 0.40 max when VGS is 10 V and ID is 7 A. Forward transfer admittance is 14 S tyo when VDS is 10 V and ID is 7A. Gate-drain(" miller') charge (Qgs) is 20 nC typ when VDD is 400 V , VGS is 10 V and ID is 15A. Gate-source charge(Qgs) is 30 nC when  VDD is 400 V , VGS is 10 V and ID is 15A.
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