2SK2158

Features: • Capable of drive gate with 1.5 V• Because of high input impedance, there is no need to consider driving current.• Bias resistance can be omitted, enabling reduction in total number of parts.Specifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT ...

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SeekIC No. : 004225960 Detail

2SK2158: Features: • Capable of drive gate with 1.5 V• Because of high input impedance, there is no need to consider driving current.• Bias resistance can be omitted, enabling reduction in ...

floor Price/Ceiling Price

Part Number:
2SK2158
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to consider driving current.
• Bias resistance can be omitted, enabling reduction in total number of parts.





Specifications

PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
50
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
I D(DC)
±0.1
A
Drain Current (Pulse)
I D(pulse)
PW 10 ms
Duty cycle 50 %
±0.2
A
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C


  Connection Diagram




Description

The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders.



The 2SK2158 is designed as one kind of N-channel vertical type MOS FET device that can be driven on a low voltage and it is not necessary to consider driving current, so this device is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders.

Features of the 2SK2158 are:(1)Capable of drive gate with 1.5 V; (2)Because of high input impedance, there is no need to consider driving current; (3)Bias resistance can be omitted, enabling reduction in total number of parts. The absolute maximum ratings of the 2SK2158 can be summarized as:(1)Drain to Source Voltage: 50 V;(2)Gate to Source Voltage: ±7.0 V;(3)Drain Current (DC): ±0.1 A;(4)Drain Current (pulse): ±0.2 A;(5)Total Power Dissipation: 200 mW;(6)Channel Temperature: 150 °C;(7)Storage Temperature:55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Drain Cut-off Current: 1.0 uA;(2)Gate Leakage Current: ±3.0 uA;(3)Gate Cut-off Voltage: 0.5 to 1.1 V;(4)Forward Transfer Admittance: 20 mS;(5)Input Capacitance: 6 pF;(6)Output Capacitance: 8 pF;(7)Reverse Transfer Capacitance: 1 pF;(8)Turn-On Delay Time: 9 ns.etc. If you want to know more information about the 2SK2158, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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