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2SK2159

Features: • Capable of drive gate with 1.5 V• Small RDS(on) R DS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A R DS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 ASpecifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 60 V Ga...

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SeekIC No. : 004225964 Detail

2SK2159: Features: • Capable of drive gate with 1.5 V• Small RDS(on) R DS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A R DS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 ASpecifications PARAMETER SY...

2SK2159 Data Sheet

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Part Number:
2SK2159
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• Capable of drive gate with 1.5 V
• Small RDS(on)
   R DS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A
   R DS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A


Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
 VGS = 0
60
V
Gate to Source Voltage
VGSS
 VDS = 0
±14
V
Drain Current (DC)
I D(DC)
±2.0
A
Drain Current (Pulse)
I D(pulse)
 PW 10 ms
Duty cycle 50 %
±4.0
A
Total Power Dissipation
PT
 Mounted on 16 cm2* 0.7 mm ceramic substrate.
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C



Description

The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders.




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