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Part Number: 2SK2162

 

 

Package Cooled: 03+

D/C: 220

 

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2SK2162 Maximum Ratings

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 180 V
Gate-source voltage VGSS ±20 V
Drain current (Note 1) ID 1 A
Power dissipation (Tc = 25) PD 20 W
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SK2162 Typical Application

• High breakdown voltage: VDSS = 180 V
• High forward transfer admittance: |Yfs| = 0.7 S (typ.)
• Complementary to 2SJ338

2SK2162 datasheet

2SK2162
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