2SK2171 Selling Leads, Price trend, 2SK2171 DataSheet download, circuit diagram from SeekIC.com

Features: · Adoption of FBET process.· Large | yfs |.· Small Ciss.· High PD allowable power dissipation.Specifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 40 V Gate-to-Drain Voltage VGDS -40 v Gate Curren...

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SeekIC No. : 004225976 Detail

2SK2171: Features: · Adoption of FBET process.· Large | yfs |.· Small Ciss.· High PD allowable power dissipation.Specifications Parameter Symbol Conditions Ratings Unit Drain-to-Sourc...

2SK2171 Data Sheet

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Part Number:: 2SK2171
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/4/17

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Description

Features:

· Adoption of FBET process.
· Large | y_fs |.
· Small Ciss.
· High P_D allowable power dissipation.

Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	V_DSX		40	V
Gate-to-Drain Voltage	V_GDS		-40	v
Gate Current	I_G		10	mA
Drain Current	I_D		100	mA
Allowable Power Dissipation	P_D		400	mW
Allowable Power Dissipation	P_D	Mounted on ceramic board (250mm²* 0.8mm)	800	mW
Junction Temperature	Tj		150	°C
Storage Temperature	Tstg		55 to +150	°C

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2SK2171

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