Purchase 2SK2173, In-stock 2SK2173 From SeekIC.
MFG:TOS Package Cooled:TO-3P D/C:08+
- Table of contents:
2SK2173
-
Suppliers
DataSheet
General Description
2SK2173 Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit | |
| Drain-source voltage |
VDSS |
60 |
V | |
| Drain−gate voltage (RGS = 20 k) |
VDGR |
60 |
V | |
| Gate−source voltage |
VGSS |
±20 |
V | |
| Drain current | DC (Note 1) |
ID |
50 |
A |
| Pulse (Note 1) |
IDP |
200 |
A | |
| Drain power dissipation (Tc = 25) |
PD |
125 |
W | |
| Single pulse avalanche energy (Note 2) |
EAS |
683 |
mJ | |
| Avalanche current |
IAR |
50 |
A | |
| Repetitive avalanche energy (Note 3) |
EAR |
12.5 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
TSTG |
-55 ~ +150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SK2173 Typical Application
4-V gate drive
Low drain−source ON resistance : RDS (ON) = 13 m (typ.)
High forward transfer admittance : |Yfs| = 40 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Low drain−source ON resistance : RDS (ON) = 13 m (typ.)
High forward transfer admittance : |Yfs| = 40 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
2SK2173
PDF/DataSheet Download
- Datasheet: 2SK2173
- File Size: 291795 KB
- Manufacturer: Toshiba
- Click here to Download
- ·2SK0065
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
- 75954 KB
- ·2SK0123
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
- 47783 KB
- ·2SK0198
- PANASONIC [Panasonic Semiconductor]
- For Low-Frequency Amplification
- 51075 KB
- ·2SK0301
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel Junction FET
- 75959 KB
- ·2SK0601
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel MOS FET
- 35848 KB
- ·2SK0614
- PANASONIC [Panasonic Semiconductor]
- For switching
- 75927 KB
- ·2SK0615
- PANASONIC [Panasonic Semiconductor]
- SILICON N-CHANNEL MOS FET
- 86887 KB
- ·2SK0620
- Silicon MOS FETs (Small Signal)
- 78733 KB
Hotspot Suppliers Product
DM102A-4G1
Price: 1-50 USD
DM102A-4G1, SANYO LCD DIDSPLAY, Optoelectronics
EKMM3B1VSN121MN30S
Price: 0.01-100 USD
aluminum electrolytic capacitor, KMM series, 120μF, 0.75 Arms
battery board
Price: 20-35 USD
battery board, Discrete Semiconductor Products, standard
K4E661612D-TP50
Price: 0.5-0.8 USD
CMOS DRAM, 4194304×16 bit, 50mA
P2114A-4
Price: 0.62-0.83 USD
Intel EXPRESS RAM, dip-18, 168 (±8) Hour, maximum access 200ns, 5v ±10%
CDCV304PW
Price: 0.4-0.7 USD
IC CLOCK BUFFER GP/PCI-X 8-TSSOP - CDCV304PW
IRS20124STRPBF
Price: 0.35-0.38 USD
high speed power MOSFET driver, 2500PCS/REEL, -0.3 to 220V, 200V high voltage
STM32F103ZCT6
Price: 4-4.2 USD
MCU, 32-bit, High-density
HIN202ECPZ
Price: 0.88-1.23 USD
±15kV, ESD-Protected RS-232 Transmitter/Receiver, 16-DIP, 5V, RoHS Compliant
DS1307
Price: 1.25-1.3 USD
serial, real-time clock, DIP-8, I2C
2SC5200
Price: 1-3 USD
Toshiba Semiconductor, transistor, TO-264, silicon NPN triple diffused, High Current
DS1213D
Price: 5-7 USD
600 mil DIP socket, built-in CMOS controller circuit, embedded lithium energy source
