2SK2233

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) @ Vds: 1800pF @ 10V
Current - Continuous Drain (Id) @ 25° C: 45A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 100W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)


Application

` 4 V gate drive
` Low drain−source ON resistance : R_{DS (ON)} = 0.022 (typ.)
` High forward transfer admittance : |Y<sub>fs</sub>| = 27 S (typ.)
` Low leakage current : I_DSS = 100 A (max) (V_DS = 60 V)
` Enhancement−mode : V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1 mA)


Specifications

Characteristics		Symbol	Rating	Unit
Drain−source voltage Drain−gate voltage (RGS = 20 k) Gate−source voltage		VDSS VDGR VGSS	60 60 ±20	V V V
Drain current	DC (Note 1) Pulse (Note 1)	ID IDP	45 180	A A
Drain power dissipation (Tc =25)		PD	100	W
Single pulse avalanche energy (Note 2)		EAS	246	mJ
Avalanche current Repetitive avalanche energy (Note 3)		IAR EAR	45 10	A mJ
Channel temperature Storage temperature range		Tch Tstg	150 −55~150

Parameters:

Technical/Catalog Information	2SK2233
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	30 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 10V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2233 2SK2233