2SK2313(F) Selling Leads, Price trend , Toshiba, 2SK2313(F) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00159609 Detail

2SK2313(F): MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm

2SK2313(F) Data Sheet

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Part Number:: 2SK2313(F)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/4/27

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	60 A
Resistance Drain-Source RDS (on) :	0.011 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3P	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.011 Ohms

Parameters:

Technical/Catalog Information	2SK2313(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2313 F 2SK2313F

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2SK2313(F)

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