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SeekIC No. : 00164342 Detail

2SK2314(F): MOSFET N-Ch 100V 27A Rdson 0.085 Ohm

2SK2314(F) Data Sheet

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Part Number:: 2SK2314(F)
Mfg:: Toshiba
Supply Ability:: 5000

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1~5000

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Upload time: 2026/6/12

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	27 A
Resistance Drain-Source RDS (on) :	0.085 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-220 ABL

Description

Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 0.085 Ohms
Package / Case : TO-220 ABL

Parameters:

Technical/Catalog Information	2SK2314(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	85 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 10V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2314 F 2SK2314F 2SK2314F ND 2SK2314FND 2SK2314F

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2SK2314(F)

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