2SK2315TYTR-E

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2A
Vgs(th) (Max) @ Id: -
Package / Case: TO-243AA
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V
Input Capacitance (Ciss) @ Vds: 173pF @ 10V
Supplier Device Package: UPAK


Parameters:

Technical/Catalog Information	2SK2315TYTR-E
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	450 mOhm @ 1A, 4V
Input Capacitance (Ciss) @ Vds	173pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	UPAK
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2315TYTR E 2SK2315TYTRE