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2SK2376(Q)

MOSFET MOSFET N-Ch 60V 45A Rdson=0.017Ohm

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SeekIC No. : 00164139 Detail

2SK2376(Q): MOSFET MOSFET N-Ch 60V 45A Rdson=0.017Ohm

2SK2376(Q) Data Sheet

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Part Number:
2SK2376(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-220 FL
Packaging : Bulk    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.025 Ohms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 45 A
Package / Case : TO-220 FL


Parameters:

Technical/Catalog Information2SK2376(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs17 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3350pF @ 10V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / Case2-10S1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2376 Q
2SK2376Q



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