2SK2376(TE24L)

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 45A
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 100W
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
Supplier Device Package: TO-220SM
Input Capacitance (Ciss) @ Vds: 3350pF @ 10V


Parameters:

Technical/Catalog Information	2SK2376(TE24L)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	17 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3350pF @ 10V
Power - Max	100W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-220FL
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2376 TE24L 2SK2376TE24L