2SK2399(TE16L1,NQ)

MOSFET N-CH 100V 5A PW-MOLD

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SeekIC No. : 003433919 Detail

2SK2399(TE16L1,NQ): MOSFET N-CH 100V 5A PW-MOLD

floor Price/Ceiling Price

US $ .35~.35 / Piece | Get Latest Price
Part Number:
2SK2399(TE16L1,NQ)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.35
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 230 mOhm @ 2.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 22nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 500pF @ 10V
Power - Max: 20W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 5A
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Power - Max: 20W
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 500pF @ 10V
Supplier Device Package: PW-MOLD
Rds On (Max) @ Id, Vgs: 230 mOhm @ 2.5A, 10V


Parameters:

Technical/Catalog Information2SK2399(TE16L1,NQ)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs230 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 500pF @ 10V
Power - Max20W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / Case2-7J1B
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2399 TE16L1,NQ
2SK2399TE16L1,NQ



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