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2SK2415-Z

Features: • Low On-Resistance - RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A) - RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)• Low Ciss :Ciss = 570 pF TYP.Specifications Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC)...

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2SK2415-Z: Features: • Low On-Resistance - RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A) - RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)• Low Ciss :Ciss = 570 pF TYP.Specifications Drain ...

2SK2415-Z Data Sheet

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Part Number:
2SK2415-Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
  - RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A)
  - RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)
• Low Ciss :Ciss = 570 pF TYP.


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±8.0 A
Drain Current (Pulse) Note1 ID(pulse) ±32 A
Total Power Dissipation (TC = 25°C) PT 20 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 8.0 A
Single Avalanche Energy Note2 EAS 6.4 mJ

Notes 1. PW 10 s, Duty cycle 1 %
          2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK2415-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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