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2SK2462

Features: • Low On-Resistance R DS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A) R DS(on)2 = 0.17 MAX. (@ VGS = 4 V, ID = 8.0 A)• Low Ciss Ciss = 790 pF TYP.• Built-in G-S Gate Protection Diodes• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS......

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SeekIC No. : 004226124 Detail

2SK2462: Features: • Low On-Resistance R DS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A) R DS(on)2 = 0.17 MAX. (@ VGS = 4 V, ID = 8.0 A)• Low Ciss Ciss = 790 pF TYP.• Built-in G-S Gate Pro...

2SK2462 Data Sheet

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Part Number:
2SK2462
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   R DS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A)
   R DS(on)2 = 0.17 MAX. (@ VGS = 4 V, ID = 8.0 A)
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS..............................100 V
Gate to Source Voltage VGSS..............................±20 V
Drain Current (DC) ID(DC)  ...............................±15 A
Drain Current (pulse)* I D(pulse) ............................±60 A
Total Power Dissipation (Tc = 25 °C) PT1........................ 30 W
Total Power Dissipation (TA = 25 °C) PT2  ....................... 2.0 W
Channel Temperature Tch ...............................150 °C
Storage Temperature Tstg ..........................55 to +150 °C
Single Avalanche Current** IAS   .............................15 A
Single Avalanche Energy** EAS  ............................22.5 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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