Purchase 2SK2469-01MR, In-stock 2SK2469-01MR From SeekIC.
MFG:FUJU Package Cooled:TO
- Table of contents:
2SK2469-01MR
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Suppliers
DataSheet
General Description
2SK2469-01MR Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain-Source-Voltage | V DS | 300 | V |
| Drain-Gate-Voltage(RGS=20K) | V DGR | 300 | V |
| Continous Drain Current | ID | 5 | A |
| Pulsed Drain Current | I D(puls) | 20 | A |
| Gate-Source-Voltage | V GS | ±30 | V |
| Max. Power Dissipation | P D | 30 | W |
| Operating and Storage Temperature Range | T ch | 150 | °C |
| T stg | -55 ~ +150 | °C |
2SK2469-01MR Features
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Avalanche Proof
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Avalanche Proof
2SK2469-01MR Typical Application
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
UPS
DC-DC converters
General Purpose Power Amplifier
2SK2469-01MR
PDF/DataSheet Download
- Datasheet: 2SK2469-01MR
- File Size: 126180 KB
- Manufacturer: FUJI [Fuji Electric]
- Click here to Download
- ·2SK0065
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
- 75954 KB
- ·2SK0123
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
- 47783 KB
- ·2SK0198
- PANASONIC [Panasonic Semiconductor]
- For Low-Frequency Amplification
- 51075 KB
- ·2SK0301
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel Junction FET
- 75959 KB
- ·2SK0601
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel MOS FET
- 35848 KB
- ·2SK0614
- PANASONIC [Panasonic Semiconductor]
- For switching
- 75927 KB
- ·2SK0615
- PANASONIC [Panasonic Semiconductor]
- SILICON N-CHANNEL MOS FET
- 86887 KB
- ·2SK0620
- Silicon MOS FETs (Small Signal)
- 78733 KB
2SK2469-01MR Relative Products
2SK2467-Y
Features of the 2SK2467-Y are:(1)high breakdown voltage is VDSS=180V;(2)high forward transfer admittance is Yfs=4.0S(Typ.). The maximum ratings of the 2SK2467-Y can be summarized as:(1):the characteristic is drain-source voltage,the symbol is VDSS,the ratin...
2SK2466
The 2SK2466 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as fol...
2SK2464
2SK2463
Features of the 2SK2463 are:(1)low on-resistance;(2)fast switching speed;(3)wide SOA (safe operating area);(4)low-voltage drive (4V);(5)easily designed drive circuits;(6)easy to parallel. Structure of the 2SK2463 are:(1)silicon N-channel;(2)MOSFET. The abs...
2SK2462
The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
2SK2461
The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
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