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2SK2476

Features: • Low On-Resistance R DS (on) = 5.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 590 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecificationsDrain to Source Voltage VDSS ..........................800 VGate to Source Voltage VGSS ...............

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SeekIC No. : 004226132 Detail

2SK2476: Features: • Low On-Resistance R DS (on) = 5.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 590 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecifications...

2SK2476 Data Sheet

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Part Number:
2SK2476
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
  R DS (on) = 5.0 (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 590 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package


Specifications

Drain to Source Voltage VDSS ..........................800 V
Gate to Source Voltage VGSS ..........................±30 V
Drain Current (DC) I D(DC) ...........................±3.0 A
Drain Current (pulse)* I D(pulse) ........................±9.0 A
Total Power Dissipation (Tc = 25 °C) PT ....................1 40 W
Total Power Dissipation (TA = 25 °C) PT....................2 2.0 W
Channel Temperature Tch ...........................150 °C
Storage Temperature Tstg ......................55 to +150 °C
Single Avalanche Current** IAS..........................3.0 A
Single Avalanche Energy** EAS ........................ 37.8 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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