Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK2499-Z

2SK2499-Z

Features: • Low On-Resistance R DS(on)1 = 9 m (VGS = 10 V, ID = 25 A) R DS(on)2 = 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3 400 pF TYP.• High Avalanche Capability.• Built-in G-S Protection DiodeSpecificationsDrain to Source Voltage VDSS.......................... 60 VGa...

product image

2SK2499-Z Picture
See larger image
SeekIC No. : 004226152 Detail

2SK2499-Z: Features: • Low On-Resistance R DS(on)1 = 9 m (VGS = 10 V, ID = 25 A) R DS(on)2 = 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3 400 pF TYP.• High Avalanche Capability.• Buil...

2SK2499-Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SK2499-Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low On-Resistance
   R DS(on)1 = 9 m (VGS = 10 V, ID = 25 A)
   R DS(on)2 = 14 m  (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• High Avalanche Capability.
• Built-in G-S Protection Diode


Specifications

Drain to Source Voltage VDSS.......................... 60 V
Gate to Source Voltage VGSS  .........................±20 V
Drain Current (DC) I D(DC)   ..........................±50 A
Drain Current (pulse)* I D(pulse).......................±200 A
Total Power Dissipation (Tc = 25 °C) PT ...................1 75 W
Total Power Dissipation (TA = 25 °C) PT2 ...................1.5 W
Channel Temperature Tch ..........................150 °C
Storage Temperature Tstg .....................55 to +150 °C
Single Avalanche Current** IAS.........................50 A
Single Avalanche Energy** EAS........................250 mJ

* PW  10 ms, Duty Cycle  1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0


Description

The 2SK2499-Z is N-Channel MOS Field Effect Transistor designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Undefined Category
VI-B63-IU
X27 589
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Optoelectronics
SFH7770
TLP423J
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Memory Cards, Modules
WT32
VTL5C7
View more