2SK2501

The 2SK2501 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 790 pF typ.;(4)low on-state resistance RDS(on)= 4.0 max. (VGS=10 V, ID=2 A).

The absolute maximum ratings of the 2SK2501 can be summarized as:(1)drain to source voltage: 900 V;(2)gate to source voltage: +/-30 V;(3)drain current (DC):±4.0 A;(4)drain current (pulse):±8.0 A;(5)total power dissipation (Tc=25 °C): 70 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK2501 can be summarized as:(1)drain to source on-state resistance: 2.8 ;(2)gate to source cut-off voltage: 2.5 to 3.5 V;(3)forward transfer admittance: 2.6 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-10.0 A;(6)input capacitance: 790 pF;(7)output capacitance: 150 pF;(8)reverse transfer capacitance: 55 pF;(9)turn-on delay time: 15 ns;(10)rise time: 22 ns;(11)turn-off delay time: 85 ns;(12)fall time: 20 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.